System and method for reducing particles in epitaxial reactors
US6161311A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber connected by an isolation gate valve to a processing chamber. Additionally, the apparatus includes pipes for delivering a purge gas into the wafer handling chamber. The purge gas is used to eliminates particles from the enclosure. The apparatus also includes a pilot operated back pressure regulator for regulating the delivery and removal of the purge gas from the enclosure. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. The apparatus also includes a Bernoulli wand for lifting and holding a single semiconductor wafer. A dome loaded regulator is used to control the ramp rates of the gas to the Bernoulli wand. The dome loaded regulator is actuated by a pilot gas. The ramp up and ramp down rates of the Bernoulli wand gas can be control by a multitude of restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks. Th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.