Use of an asymmetric waveform to control ion bombardment during substrate processing
US6162709A · kind A · utility
126Cited by
28References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jan 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.