Chemical treatment for preventing copper dendrite formation and growth
US6162727A · kind A · utility
9Cited by
7References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising acetic acid and ammonium fluoride. Embodiments include removing up to 60 .ANG., e.g. about 10 .ANG. to about 30 .ANG., of silicon oxide by immersing the wafer in a solution containing at least about 90 wt. % acetic acid and up to about 10 wt. % ammonium fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.