Films doped with carbon for use in integrated circuit technology
US6162737A · kind A · utility
22Cited by
7References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1999 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jul 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to films comprising silicon and oxygen that are doped with carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.