Ronald A. Weimer
100Patents
20h-index
55Co-inventors
93Inventor score
Filing activity: Nov 4, 1994 → Feb 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7422635B2 | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces | Chemistry; Metallurgy | 456 | Expired |
| US6462371B1 | Films doped with carbon for use in integrated circuit technology | Emerging Cross-Sectional Technologies | 244 | Expired |
| US6348380B1 | Use of dilute steam ambient for improvement of flash devices | Electricity | 220 | Expired |
| US6455372B1 | Nucleation for improved flash erase characteristics | Electricity | 168 | Expired |
| US5634974A | Method for forming hemispherical grained silicon | Emerging Cross-Sectional Technologies | 68 | Expired |
| US6362086B1 | Forming a conductive structure in a semiconductor device | Electricity | 61 | Expired |
| US7019351B2 | Transistor devices, and methods of forming transistor devices and circuit devices | Electricity | 60 | Expired |
| US5759262A | Method of forming hemispherical grained silicon | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6559007B1 | Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide | Electricity | 51 | Expired |
| US6291868A | Forming a conductive structure in a semiconductor device | Electricity | 44 | Expired |
| US8228743B2 | Memory cells containing charge-trapping zones | Emerging Cross-Sectional Technologies | 42 | Active |
| US6815805B2 | Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source | Electricity | 38 | Expired |
| US5930106A | DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films | Electricity | 38 | Expired |
| US7647886B2 | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers | Emerging Cross-Sectional Technologies | 31 | Active |
| US5962065A | Method of forming polysilicon having a desired surface roughness | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6150208A | DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films | Electricity | 28 | Expired |
| US6592661B1 | Method for processing wafers in a semiconductor fabrication system | Chemistry; Metallurgy | 24 | Expired |
| US6162737A | Films doped with carbon for use in integrated circuit technology | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6544908B1 | Ammonia gas passivation on nitride encapsulated devices | Electricity | 21 | Expired |
| US7173304B2 | Method of manufacturing devices comprising conductive nano-dots, and devices comprising same | Electricity | 20 | Expired |
| US7898850B2 | Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells | Emerging Cross-Sectional Technologies | 18 | Active |
| US7056806B2 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces | Chemistry; Metallurgy | 16 | Expired |
| US5688550A | Method of forming polysilicon having a desired surface roughness | Emerging Cross-Sectional Technologies | 14 | Expired |
| US9311268B1 | Method and system for communication with peripheral devices | Electricity | 13 | Active |
| US6410968B1 | Semiconductor device with barrier layer | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.