Apparatus for performing jet vapor reduction of the thickness of process layers
US6165314A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2000 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Jun 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method and apparatus for reducing the thickness of a process layer. The method comprises generating a relatively high velocity gas stream comprised of active ions that will react with the process layer, and moving the wafer relative to the nozzle to effect a reduction in the thickness of the process layer. The apparatus is comprised of a process chamber, means for securing a wafer in the chamber, a nozzle having an exit that is substantially the same width as the diameter of the wafer positioned in the chamber. The apparatus further comprises a means for moving the wafer relative to the nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.