Magnetic random access memory and fabricating method thereof
US6165803A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An improved and novel fabrication method for a magnetic element, and more particularly its use in a magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44) are defined by transforming portions (42b) of a magnetic blanket layer into an insulative material. The magnetic blanket layer, which includes magnetic layers (40,42) and a non-magnetic layer (41) sandwiched by the magnetic layers, which are deposited on conductor layer (34). The insulative, or inactive, portions (42b) define and separate the plurality of memory elements (43, 44).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.