Jon Slaughter
120Patents
25h-index
53Co-inventors
93Inventor score
Filing activity: Jul 20, 1998 → Mar 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5940319A | Magnetic random access memory and fabricating method thereof | Electricity | 154 | Expired |
| US6211090A | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories | Performing Operations; Transporting | 153 | Expired |
| US6233172A | Magnetic element with dual magnetic states and fabrication method thereof | Electricity | 153 | Expired |
| US6292389A | Magnetic element with improved field response and fabricating method thereof | Electricity | 140 | Expired |
| US6174737A | Magnetic random access memory and fabricating method thereof | Electricity | 125 | Expired |
| US6376260B1 | Magnetic element with improved field response and fabricating method thereof | Electricity | 117 | Expired |
| US6165803A | Magnetic random access memory and fabricating method thereof | Electricity | 99 | Expired |
| US6153443A | Method of fabricating a magnetic random access memory | Electricity | 86 | Expired |
| US6831312B2 | Amorphous alloys for magnetic devices | Emerging Cross-Sectional Technologies | 82 | Expired |
| US7098495B2 | Magnetic tunnel junction element structures and methods for fabricating the same | Electricity | 76 | Expired |
| US6544801B1 | Method of fabricating thermally stable MTJ cell and apparatus | Electricity | 66 | Expired |
| US8686484B2 | Spin-torque magnetoresistive memory element and method of fabricating same | Electricity | 65 | Active |
| US6205052A | Magnetic element with improved field response and fabricating method thereof | Electricity | 52 | Expired |
| US6801415B2 | Nanocrystalline layers for improved MRAM tunnel junctions | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6365419B1 | High density MRAM cell array | Electricity | 51 | Expired |
| US7095646B2 | Multi-state magnetoresistance random access cell with improved memory storage density | Physics | 48 | Expired |
| US6818961B1 | Oblique deposition to induce magnetic anisotropy for MRAM cells | Electricity | 46 | Expired |
| US9419208B2 | Magnetoresistive memory element and method of fabricating same | Electricity | 44 | Active |
| US7572645B2 | Magnetic tunnel junction structure and method | Electricity | 40 | Active |
| US9136464B1 | Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier | Emerging Cross-Sectional Technologies | 40 | Active |
| US6183859A | Low resistance MTJ | Emerging Cross-Sectional Technologies | 37 | Expired |
| US7067331B2 | Method of making amorphous alloys for semiconductor device | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6946697B2 | Synthetic antiferromagnet structures for use in MTJs in MRAM technology | Emerging Cross-Sectional Technologies | 30 | Expired |
| US8390283B2 | Three axis magnetic field sensor | Electricity | 28 | Active |
| US6518071B1 | Magnetoresistive random access memory device and method of fabrication thereof | Electricity | 25 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.