Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
US6165834A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | May 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention comprises methods of forming capacitors, methods of processing dielectric layers, and methods of forming a DRAM cell. In one implementation, a method of processing a dielectric layer comprises forming a high K oxygen containing dielectric layer over a substrate. The high K dielectric layer is annealed at a temperature of at least about 200.degree. C. and at a pressure of at least about 50 Torr in an ozone comprising atmosphere. In another implementation, annealing of the high K dielectric layer is conducted at a temperature of at least about 200.degree. C. and at a pressure of at least about 0.1 Torr in an ozone comprising atmosphere which is void of plasma. Pressures of greater than one atmosphere are most preferred. In another implementation, annealing of the high K capacitor dielectric layer is conducted at a substrate temperature of at least about 300.degree. C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma. The processing is ideally implemented in capacitor fabrication, and more particularly in DRAM circuitry fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.