Vishnu K. Agarwal
144Patents
25h-index
31Co-inventors
86Inventor score
Filing activity: Apr 10, 1998 → May 8, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6576564B2 | Photo-assisted remote plasma apparatus and method | Electricity | 453 | Expired |
| US6930041B2 | Photo-assisted method for semiconductor fabrication | Electricity | 451 | Expired |
| US7238616B2 | Photo-assisted method for semiconductor fabrication | Electricity | 449 | Expired |
| US6165834A | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell | Electricity | 149 | Expired |
| US6667502B1 | Structurally-stabilized capacitors and method of making of same | Electricity | 109 | Expired |
| US6670256B2 | Metal oxynitride capacitor barrier layer | Electricity | 105 | Expired |
| US6206759A | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines | Emerging Cross-Sectional Technologies | 96 | Expired |
| US6323046A | Method and apparatus for endpointing a chemical-mechanical planarization process | Electricity | 78 | Expired |
| US6417537B1 | Metal oxynitride capacitor barrier layer | Electricity | 73 | Expired |
| US6596583B2 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | Electricity | 63 | Expired |
| US6198144A | Passivation of sidewalls of a word line stack | Electricity | 58 | Expired |
| US6297527A | Multilayer electrode for ferroelectric and high dielectric constant capacitors | Electricity | 53 | Expired |
| US6361832B1 | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6365453B1 | Method and structure for reducing contact aspect ratios | Electricity | 49 | Expired |
| US6465828B2 | Semiconductor container structure with diffusion barrier | Electricity | 47 | Expired |
| US6201276A | Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films | Electricity | 43 | Expired |
| US6537912B1 | Method of forming an encapsulated conductive pillar | Electricity | 37 | Expired |
| US6156638A | Integrated circuitry and method of restricting diffusion from one material to another | Electricity | 36 | Expired |
| US6784504B2 | Methods for forming rough ruthenium-containing layers and structures/methods using same | Electricity | 33 | Expired |
| US6218256A | Electrode and capacitor structure for a semiconductor device and associated methods of manufacture | Electricity | 32 | Expired |
| US6720609B2 | Structure for reducing contact aspect ratios | Electricity | 32 | Expired |
| US6095085A | Photo-assisted remote plasma apparatus and method | Chemistry; Metallurgy | 29 | Expired |
| US6746916B2 | Method for forming a multilayer electrode for a ferroelectric capacitor | Electricity | 29 | Expired |
| US6429127B1 | Methods for forming rough ruthenium-containing layers and structures/methods using same | Electricity | 28 | Expired |
| US6777739B2 | Multilayer electrode for a ferroelectric capacitor | Electricity | 26 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.