Method for making InP heterostructure devices
US6165859A · kind A · utility
5Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1999 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Feb 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd--Pt--Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.