Advanced IC bonding pad design for preventing stress induced passivation cracking and pad delimitation through stress bumper pattern and dielectric pin-on effect
US6165886A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Nov 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved metal bonding pad is disclosed which can prevent the formation of cracks during the high temperature PECVD deposition, and the subsequent annealing, of a passivation layer which is formed to encroach the metal bonding pad and provide an encapsulation force on the metal bonding pad. The metal bonding pad comprises a plurality of stress bumpers on the periphery thereof. The stress bumpers can be hollow elongated round-cornered rectangles, pin-shaped circles, Y-shaped polygons, or ellipses. The stress bumpers, which create a discontinuous structure in the metal pad, can effectively stop stress propagation as well as relieve and re-direct stress propagation, so as to maintain the integrity of the passivation encroachment and prevent the peeling off problems often observed with the metal bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.