Inventor · Hsinchu, TW

Chi-Fa Lin

13Patents
9h-index
3Co-inventors
54Inventor score

Filing activity: Mar 19, 1998 → Dec 30, 1999

Most-cited inventions

PatentTitleAreaCited byStatus
US5920792A High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers Electricity 268 Expired
US6277757A Methods to modify wet by dry etched via profile Electricity 94 Expired
US6477447B1 Methods to generate numerical pressure distribution data for developing pressure related components Electricity 19 Expired
US5969409A Combined in-situ high density plasma enhanced chemical vapor deposition (HDPCVD) and chemical mechanical polishing (CMP) process to form an intermetal dielectric layer with a stopper layer embedded therein Electricity 17 Expired
US6165886A Advanced IC bonding pad design for preventing stress induced passivation cracking and pad delimitation through stress bumper pattern and dielectric pin-on effect Electricity 14 Expired
US5946592A Combined in-situ high density plasma enhanced chemical vapor deposition (HDPCVD) and chemical mechanical polishing (CMP) process to form an intermetal dielectric layer with a stopper layer embedded therein Electricity 12 Expired
US6033987A Method for mapping and adjusting pressure distribution of CMP processes Performing Operations; Transporting 11 Expired
US6180997A Structure for a multi-layered dielectric layer and manufacturing method thereof Electricity 10 Expired
US6307268A Suppression of interconnect stress migration by refractory metal plug Electricity 9 Expired
US6235608A STI process by method of in-situ multilayer dielectric deposition Emerging Cross-Sectional Technologies 9 Expired
US6441465B2 Scribe line structure for preventing from damages thereof induced during fabrication Electricity 8 Expired
US6204551A Modified SOG coater's hot plate to improve SOG film quality Electricity 1 Expired
US6323122A Structure for a multi-layered dielectric layer and manufacturing method thereof Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.