Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor
US6167837A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 12, 1999 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Jan 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A PECVD reactor for processing a single wafer. The reactor has a susceptor for holding a wafer horizontally, an apparatus for lifting the wafer from the susceptor for loading and unloading. The horizontally positioned thermal plate is positioned above the susceptor for uniform transfer of radiant heat energy from heat lamps to the wafer. The thermal plate also serves as an RF plate, being constructed of an electrically conductive material and connected to an RF transmission line and connector for receiving RF energy from an RF generator for the purpose of providing an RF field for plasma enhancement. The thermal plate is configured thinner near its edges, so as to space the plate further from the susceptor and thicker near the center, placing it closer to the susceptor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.