Method for producing barrier-free semiconductor memory configurations

US6168988A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gunther Schindler · Hersbruck, DE
• Walter Hartner · Munich, DE
• Frank Hintermaier · Hersbruck, DE
• Carlos Mazure-Espejo · Zorneding, DE

Key dates

• Filing date: Mar 30, 1999
• Grant date: Jan 2, 2001
• Expiry date: Mar 30, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A method for producing an integrated semiconductor memory configuration, in particular uses ferroelectric materials as storage dielectrics. A conductive connection between a first electrode of a storage capacitor and a selection transistor is produced only after deposition of the storage dielectric.