Semiconductor devices comprised of one or more epitaxial layers
US6169306A · kind A · utility
52Cited by
6References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1998 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Jul 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a novel semiconductor device and a method for making same. As disclosed herein, a gate dielectric comprised of epitaxial metal oxide is positioned above a semiconducting substrate. A gate conductor comprised of an epitaxial conductive material is positioned above the gate dielectric. The method comprises forming a layer of an epitaxial metal oxide above a semiconducting substrate, forming a layer of epitaxial conductive material above the layer of epitaxial metal oxide, and forming a source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.