Oxidation treatment method and apparatus
US6171104A · kind A · utility
21Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.