Patent · US Expired

Chemically amplified resist

US6171755A · kind A · utility

13Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Klaus Elian · Alteglofsheim, DE
Ewald Karl Michael Günther · Regenstauf, DE
Rainer Leuschner · Regensburg, DE

Key dates

Filing date	Nov 30, 1998
Grant date	Jan 9, 2001
Priority date	—
Expiry date	Nov 30, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S430/127
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A chemically amplified resist for electron beam lithography contains the following components: PA1 a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, PA1 a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pK.sub.a value .ltoreq.2.5 (photo acid generator), PA1 an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and PA1 a solvent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.