Method for forming hemispherical grained silicon structure
US6171955A · kind A · utility
6Cited by
12References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 8, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Feb 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is described for forming a hemispherical grained silicon structure. A patterned amorphous silicon layer is formed over a wafer. The amorphous silicon layer is etched by an etching step with a mixed solution including a hydrofluoric solution and an oxidizing agent. A cleaning step is performed with the hydrofluoric solution. An annealing step is performed to form the hemispherical grained silicon structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.