System and method for thermal processing of a semiconductor substrate
US6172337A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Jul 8, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction. The wafer is placed on or near the heated block within the vacuum cavity for heating by conduction and radiation. The rate of heating may be controlled by varying pressure across a range of very low pressures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.