Method and apparatus for dry etching
US6174408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus 1 for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber 2 in which a specimen stage 12 having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage 12 by cooling the specimen stage 12 by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines 21a-21d having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage 12 is cooled by flowing the coolant through the pipelines 21a-21d. The cooling means is provided with a control means 22 for controlling the amount of the coolant caused to flow to each of the plurality of pipelines 21a-21d respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.