Wafer defect detection method utilizing wafer with development residue attracting area
US6174632A · kind A · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7065
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wafer defect detection method is disclosed that includes coating a wafer with a resist, then exposing a first section of the wafer, then developing the resist, and finally inspecting the wafer for defects. Since certain types of defects occur more often in areas with fewer structures, these defects can be better detected by exposing a significant area of the wafer without a reticle or with a reticle that contains few structures in a section of the wafer. Since different defects tend to occur depending on the structure, different inspection techniques can be used in those areas to better detect the defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.