Method of fabricating metal oxide semiconductor
US6174778A · kind A · utility
17Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a metal oxide semiconductor includes formation of a gate on a substrate. A source/drain extension is formed beside the gate in the substrate. An ion implantation step is performed to implant heavy impurities with a low diffusion coefficient in the substrate. A heavily doped halo region is formed in the substrate below the source/drain extension. A tilt-angled halo implantation step is performed to form a halo-implanted region in the substrate to the side of the source/drain extension below the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.