Method for a pre-amorphization
US6174791A · kind A · utility
7Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an amorphous silicon layer over the terminals of a MOS transistor. The method includes the steps of forming a mask layer having an opening that exposes the gate polysilicon layer over the MOS transistor. Next, using the mask layer as a mask, an inactive ion implant operation is carried out such that inactive ions are implanted into the gate polysilicon layer. Thereafter, again using the mask layer as a mask, a first heavy bombarding operation is carried out, implanting ions locally. Finally, the mask layer is removed and then a second heavy bombarding operation is carried out, implanting ions globally.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.