C. C. Hsue
7Patents
4h-index
5Co-inventors
39Inventor score
Filing activity: Nov 6, 1997 → Nov 19, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5981334A | Method of fabricating DRAM capacitor | Electricity | 25 | Expired |
| US6026012A | Dual port random access memory | Physics | 8 | Expired |
| US6211027A | Method for manufacturing PMOS transistor | Electricity | 7 | Expired |
| US6174791A | Method for a pre-amorphization | Electricity | 7 | Expired |
| US6313006A | Method of field implantation | Electricity | 1 | Expired |
| US6221710A | Method of fabricating capacitor | Electricity | 1 | Expired |
| US6391760B1 | Method of fabricating local interconnect | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.