Integrated circuit device interconnection techniques
US6174803A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to multilevel integrated circuit interconnection techniques. An integrated circuit having a number of electronic components along a semiconductor substrate and a first connection layer having a first number of conductors in selective electrical contact with the components is provided. A first insulative layer is formed on the first connection layer with a first pattern of openings therethrough. A second connection layer is established that has a second number of conductors selectively interconnected to the first conductors through the first pattern of openings. A second insulative layer is formed on the first connection layer with a second pattern of openings therethrough. A third connection layer is formed on the second insulative layer having a third dielectric and a third number of conductors selectively interconnecting the second conductors. The first and second insulative layers are preferably etch selective to a dielectric included in the first, second, and third connection layers; and crossover, crossunder, or local interconnects are formed in a different connection layer than routing interconnects to facilitate higher interconnection density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.