Method of forming titanium film by CVD
US6177149A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl.sub.4 gas, H.sub.2 gas, Ar gas and SiH.sub.4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550.degree. C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.