Preventing Cu dendrite formation and growth
US6177349A · kind A · utility
8Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersion in and/or double sided brush scrubbing with a chemical agent. Embodiments include removing controlled portions up to 50 .ANG. of silicon oxide by immersion in and/or double sided brush scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and dionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.