Metallization etching techniques for reducing post-etch corrosion of metal lines

US6177353A · kind A · utility

Assignee

• Infineon Technologies North America Corp. · US

Inventors

• Martin Gutsche · Dorfen, DE
• Peter Strobl · Taipei, TW
• Stephan Wege · Osterburken, DE
• Eike Lueken · Radebeul, DE
• Georg Stojakovic · Poughkeepsie, US
• Bruno Spuler · Wappingers Falls, US

Key dates

• Filing date: Sep 15, 1998
• Grant date: Jan 23, 2001
• Expiry date: Sep 15, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32139
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl.sub.2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch.