Inventor · Dorfen, DE

Martin Gutsche

52Patents
13h-index
61Co-inventors
87Inventor score

Filing activity: Mar 31, 1997 → Apr 25, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6835417B2 Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes Chemistry; Metallurgy 103 Expired
US6033977A Dual damascene structure Electricity 80 Expired
US6177353A Metallization etching techniques for reducing post-etch corrosion of metal lines Electricity 40 Expired
US5980770A Removal of post-RIE polymer on Al/Cu metal line Emerging Cross-Sectional Technologies 38 Expired
US7317201B2 Method of producing a microelectronic electrode structure, and microelectronic electrode structure Electricity 33 Expired
US7420199B2 Resistivity changing memory cell having nanowire electrode Electricity 31 Expired
US6455369B1 Method for fabricating a trench capacitor Emerging Cross-Sectional Technologies 24 Expired
US5854126A Method for forming metallization in semiconductor devices with a self-planarizing material Electricity 22 Expired
US7119395B2 Memory cell with nanocrystals or nanodots Electricity 21 Expired
US5935873A Deposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etching Electricity 18 Expired
US7138677B2 Capacitor arrangement with capacitors arranged one in the other Electricity 14 Expired
US6207584A High dielectric constant material deposition to achieve high capacitance Electricity 14 Expired
US6207524A Memory cell with a stacked capacitor Electricity 13 Expired
US8084190B2 Process for producing sublithographic structures Electricity 13 Active
US6437387B1 Memory cell with a stacked capacitor Electricity 12 Expired
US7605090B2 Process for producing sublithographic structures Electricity 11 Active
US6693016B2 Method of fabricating a trench-structure capacitor device Electricity 11 Expired
US6420099B1 Tungsten hard mask for dry etching aluminum-containing layers Electricity 9 Expired
US7303970B2 Method of fabricating dielectric mixed layers and capacitive element and use thereof Electricity 9 Expired
US6953722B2 Method for patterning ceramic layers Electricity 9 Expired
US6852640B2 Method for fabricating a hard mask Electricity 6 Expired
US6559005B2 Method for fabricating capacitor electrodes Electricity 6 Expired
US7081383B2 Method for fabricating memory cells and memory cell array Electricity 5 Expired
US7084454B2 Nonvolatile integrated semiconductor memory Emerging Cross-Sectional Technologies 5 Expired
US7157371B2 Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices Electricity 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.