Lithography reflective mask
US6178221A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Dec 4, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70233
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective lithography mask (12) including a substrate (40); a reflective coating (42); a plurality of absorbing blocks (44) covering certain regions of the reflective coating (42) in a manner corresponding to a desired circuit pattern; and a plurality of buffer blocks (46) situated between the covered regions of the reflective coating and the absorbing blocks. The buffer blocks (46) are made of an electrically conducting material, such as carbon in graphite form; tin oxide (and materials based on this compound) and/or indium oxide (and materials based on this compound). Since the buffer material is electrically conducting, rather than insulating, the risk of electrostatic discharge damage is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.