Barrier layer fabrication methods
US6180481A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Jan 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary embodiments of the present invention teach a process for forming a storage capacitor for a semiconductor assembly, by forming a first storage electrode having a top surface consisting of titanium nitride; forming a barrier layer directly on the titanium nitride, the barrier layer (a material containing any one of amorphous silicon, tantalum, titanium, or strontium) being of sufficient thickness to substantially limit the oxidation of the titanium nitride when said semiconductor assembly is subjected to an oxidizing agent (either an oxidizing agent or an nitridizing agent); converting a portion of the barrier layer to a dielectric compound; depositing a storage cell dielectric directly on the dielectric compound, the storage cell dielectric being of the same chemical makeup as the dielectric compound and thereby using the dielectric compound as a nucleation surface; and forming a second capacitor electrode on the storage cell dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.