Multi-element deflection aberration correction for electron beam lithography
US6180947A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of optimizing locations of correction elements of a charged particle beam system determines respective corrector element currents to achieve optimum correction as a function of individual corrector location. Substantially complete dynamic correction of FSD and SFD can be obtained consistent with efficiency of operation and minimization of deflection distortion. In particular, FSD and SFD corrections can be sufficiently separated for substantially complete correction of SFD and FSD simultaneously with two stigmators. Both of these types of correction can be provided in complex charged particle beam systems employing curvilinear axis (CVA) particle trajectories and or large area reduction projection optics (LARPO) which cause complex hybrid aberrations in order to achieve high throughput consistent with extremely high resolution supporting one-tenth micron minimum feature size lithography regimes and smaller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.