Ion repulsion structure for fuse window
US6180993A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion repulsion structure for a fuse window is provided. The ion repulsion structure includes multi-level metallic layers and a P-type silicon semiconductor substrate having a plurality of wells. The P-type silicon semiconductor substrate includes an N-type well, a P-type well formed in the N-type well and a plurality of P+ type diffusion regions formed in the P-type well. A fuse element is formed on the P-type silicon semiconductor substrate. A fuse window layer is formed over the fuse element. Multi-level metallic layers surrounding the fuse window are formed. A plurality of contact plugs is electrically connected between the P+ type diffusion regions of the semiconductor substrate and the lowest metallic layer. A plurality of via plugs electrically connect the multi-level metallic layers to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.