Copper interconnection structure incorporating a metal seed layer
US6181012A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.