Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom
US6184052A · kind A · utility
12Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Oct 26, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Oct 26, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.