Semiconductor device and method of manufacturing the same
US6184083A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Jun 29, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first insulator film and a first polysilicon film are formed on first and second element regions of a semiconductor substrate. The first insulator film and first polysilicon film are removed from the second element region. A second insulator film is formed on the second element region from which the first insulator film and first polysilicon film are removed, and a second polysilicon film is formed on the second insulator film. The first polysilicon film is processed, forming a first gate electrode at the first element region. The second polysilicon film is processed, forming a second gate electrode at the second element region. A silicon nitride film is removed from an element-isolation region. A metal film is formed on the region from which the silicon nitride film has been removed, and connects the first and second gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.