Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
US6184110A · kind A · utility
41Cited by
4References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 30, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Apr 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a nitrogen-implanted gate oxide in a semiconductor device includes preparing a silicon substrate; forming an oxide layer on the prepared substrate; and implanting N.sup.+ or N.sub.2.sup.+ ions into the oxide layer in a plasma immersion ion implantation apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.