Dry process for cleaning residues/polymers after metal etch
US6184134A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2000 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Feb 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An all dry, low temperature process, for complete removal of organics and inorganic residues after metal etch of a microelectronic device comprising: rinsing a microelectronic device having a metallization layer after metal etch with a solution of ammonium hydroxide and hydrogen peroxide; subjecting the rinsed metallization layer to a low temperature GaSonics cleaning by exposing photoresist residue surface of the metallization layer to a fluorine containing reactive gas to form volatile compounds in the presence of a radio frequency input followed by photoresist stripping in an oxygen plasma at low temperature; subjecting the low temperature GaSonics treated residue surface to a gaseous SO.sub.3 strip at low temperature to remove additional residue; and rinsing the SO.sub.3 stripped material with de-ionized water to remove any remaining resist and residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.