Magnetic random access memory (MRAM) device including differential sense amplifiers
US6185143A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2000 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Feb 4, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Resistance of a selected memory cell in a Magnetic Random Access Memory ("MRAM") device is sensed by a read circuit including a differential amplifier, a first current mode preamplifier coupled to a sense node of the differential amplifier, and a second current mode preamplifier coupled to a reference node of the differential amplifier. During a read operation, the first preamplifier applies a regulated voltage to the selected memory cell, and the second preamplifier applies a regulated voltage to a reference cell. A sense current flows through the selected memory cell and to the sense node of the differential amplifier, while a reference current flows through the reference cell and to the reference node of the differential amplifier. Resulting is a differential voltage across sense and reference nodes. The differential voltage indicates whether a logic value of `0` or `1` is stored in the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.