Semiconductor device and production thereof
US6187100A · kind A · utility
1Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Oct 7, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.