Positive photoresist compositions and multilayer resist materials using same
US6187500A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Nov 2, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L61/14
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
In a positive photoresist composition including (A) an alkali-soluble novolak resin and (B) a naphthoquinonediazide ester, the alkali-soluble novolak resin is obtained synthetically by condensation of phenol compounds and an aldehyde or ketone, and the phenol compounds include, for example, 1% to 20% by mole of hydroquinone, 30% to 95% by mole of m-cresol and 2% to 50% by mole of 2,5-xylenol. Thus, a high-definition positive photoresist composition can be obtained, which inhibits the formation of scum, and is satisfactory in sensitivity, sectional shape, focal depth range and other properties even in a process for the formation of an ultrafine resist pattern of 0.30 .mu.m or below by lithography using i-ray.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.