Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
US6187606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Sep 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.