Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layer
US6187650A · kind A · utility
2Cited by
6References
6Claims
0Family size
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Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a planar silicon nitride layer is disclosed. The method comprises: forming a pad oxide layer; forming a first nitride layer on the pad oxide layer; forming a stop layer on the first nitride layer; forming a second nitride layer on the stop layer; performing intermediate processes that damage the second nitride layer; removing the second nitride layer; removing the stop layer such that the first nitride layer remains as the planar silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.