Process for deuterium passivation and hot carrier immunity
US6187665A · kind A · utility
13Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Aug 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76861
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process sequence for forming a semiconductor device utilizes a passivation annealing process using deuterium which enhances immunity to hot carrier effects and extends device lifetime. The process sequence is carried out prior to the introduction of metal conductive films to the device. The process sequence includes a three-step passivation, de-passivation, re-passivation sequence and utilizes a barrier film to encapsulate deuterium molecules in the vicinity of a gate oxide, during the de-passivation operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.