Method and apparatus for planarization of a substrate
US6187681A · kind A · utility
109Cited by
15References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Method and apparatus for a chemical-mechanical-polishing (CMP) support pad structure are described. The support pad structure is made with a housing to hold an open-cell material and a fluid. The fluid is supplied in a gaseous and/or a liquid state to affect rigidity of the pad. By controlling rigidity, material removal rates may be directly affected during CMP processing. Moreover, fluid flow through the support pad structure may be regulated to adjust temperature during CMP processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.