Method and apparatus for etching a substrate
US6187685A · kind A · utility
135Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Feb 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.