Semiconductor light-emitting device
US6188087A · kind A · utility
0Cited by
8References
28Claims
0Family size
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Key dates
| Filing date | Sep 8, 1997 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Sep 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising In.sub.X Ga.sub.1-X N, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength .lambda. of emitted light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.