Flash EPROM cell with reduced short channel effect and method for providing same
US6188101A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 14, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Jan 14, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
Abstract
Reduction in the short channel effect of a Flash EPROM cell is described. A method includes forming a gate structure on a substrate structure, and performing a nitrogen implant. Further included is performing device doping, wherein the nitrogen implant inhibits diffusion of dopant material into a channel of the cell. A Flash EPROM cell with reduced short channel effect includes a gate region, a drain region, and a source region, the source region and drain region defining a channel region therebetween beneath the gate region. The source region and drain region further have nitrogen implanted therein to reduce lateral diffusion of dopant material into the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.