Layout for semiconductor memory including multi-level sensing
US6188596A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory module configuration has been developed, which employs multi-level sensing, low-voltage-swing differential signal paths, and array layout techniques to better optimize area/speed/power tradeoffs. In some configurations two-level sensing is employed with secondary sense amplifiers positioned toward a middle of the memory module with memory banks or submodules positioned therearound. Primary sense-amplifiers in the submodules or banks sense differential signals on local bit-lines spanning the corresponding submodule or bank and drive a low-voltage-swing differential signal onto global bit-lines that span a subset of the submodules or banks. The global bit-lines are sensed by secondary sense amplifiers that drive data outputs across a subset of the submodules or banks toward output circuits. In some configurations the memory module is divided into upper and lower portions with upper global bit-lines spanning the upper portion and lower global bit-lines spanning the lower portion. Corresponding upper and lower global bit-lines are disjoint and are sensed by corresponding upper and lower secondary sense amplifiers. By this arrangement, the minimum to maximum variation in access…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.